PART |
Description |
Maker |
SGU20N40L |
Wide Noise Immunity IGBT Suitable for Strobe Flash applications(应用于闸门闪光的抗噪声绝缘栅双极晶体IGBT)) 400 V, N-CHANNEL IGBT, TO-251
|
Fairchild Semiconductor, Corp.
|
SGU20N40LTU |
400 V, N-CHANNEL IGBT, TO-251 IPAK-3
|
Fairchild Semiconductor, Corp.
|
STGP18N40LZ STGB18N40LZ-1 STGD18N40LZ-1 STGD18N40L |
25 A, 420 V, N-CHANNEL IGBT, TO-251 EAS 180 mJ - 390 V - internally clamped IGBT
|
ST Microelectronics http:// STMicroelectronics
|
FQU20N06LTU |
60V N-Channel Logic level QFET; Package: TO-251(IPAK); No of Pins: 3; Container: Rail 17.2 A, 60 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251
|
Fairchild Semiconductor, Corp.
|
GT5G102 GT5G1022-7B5C |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS 5 A, 400 V, N-CHANNEL IGBT
|
Toshiba Semiconductor
|
SUU40N06-25L |
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 34A I(D) | TO-251 晶体管| MOSFET的| N沟道| 60V的五(巴西)直| 34A条(丁)|251
|
Vishay Intertechnology, Inc.
|
KSC5054OTU FAIRCHILDSEMICONDUCTORCORP-KSC5054YTU K |
500 mA, 400 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-251
|
FAIRCHILD SEMICONDUCTOR CORP
|
2MBI400N-060-01A |
400 A, 600 V, N-CHANNEL IGBT
|
FUJI ELECTRIC CO LTD
|
IXGN400N60A3 |
400 A, 600 V, N-CHANNEL IGBT MINIBLOC-4
|
IXYS, Corp.
|
NGP8203N |
Ignition IGBT 20 A, 400 V, N-Channel TO-220 Ignition IGBT 20 A, 400 V, N−Channel TO−220
|
ONSEMI[ON Semiconductor]
|
PHU101NQ03LT PHU101NQ03LT127 |
N-channel TrenchMOS logic level FET 75 A, 30 V, 0.0075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA PLASTIC, TO-251, IPAK-3
|
NXP Semiconductors Murata Power Solutions, Inc.
|
|